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Temperature and annealing effects on InAs nanowire MOSFETs

  • Evangelos Gogolides (PhD)
Publiceringsår: 2011
Språk: Engelska
Sidor: 1105-1108
Publikation/Tidskrift/Serie: Microelectronic Engineering
Volym: 88
Nummer: 7
Dokumenttyp: Konferensbidrag
Förlag: Elsevier Science BV


We report on temperature dependence on the drive current as well as long-term effects of annealing in vertical InAs nanowire Field-Effect Transistors. Negatively charged traps in the HfO2 gate dielectric are suggested as one major factor in explaining the effects observed in the transistor characteristics. An energy barrier may be correlated with an un-gated InAs nanowire region covered with HfO2 and the effects of annealing may be explained by changed charging on defects in the oxide. Initial simulations confirm the general effects on the I-V characteristics by including fixed charge. (c) 2011 Elsevier B.V. All rights reserved.



  • Technology and Engineering
  • InAs
  • Nanowire
  • FET
  • High-k
  • HfO2
  • III-V semiconductor
  • Annealing


17th International Conference on Insultating Films on Semiconductors
Grenoble, France
  • Nano
  • ISSN: 0167-9317

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