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Temperature and annealing effects on InAs nanowire MOSFETs

In English

Författare

Redaktör

  • Evangelos Gogolides

Summary, in English

We report on temperature dependence on the drive current as well as long-term effects of annealing in vertical InAs nanowire Field-Effect Transistors. Negatively charged traps in the HfO2 gate dielectric are suggested as one major factor in explaining the effects observed in the transistor characteristics. An energy barrier may be correlated with an un-gated InAs nanowire region covered with HfO2 and the effects of annealing may be explained by changed charging on defects in the oxide. Initial simulations confirm the general effects on the I-V characteristics by including fixed charge. (c) 2011 Elsevier B.V. All rights reserved.

Publiceringsår

2011

Språk

Engelska

Sidor

1105-1108

Publikation/Tidskrift/Serie

Microelectronic Engineering

Volym

88

Issue

7

Dokumenttyp

Konferensbidrag

Förlag

Elsevier

Ämne

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Nyckelord

  • InAs
  • Nanowire
  • FET
  • High-k
  • HfO2
  • MOSFET
  • III-V semiconductor
  • Annealing

Conference name

17th International Conference on Insultating Films on Semiconductors

Conference date

2011-06-21 - 2011-06-24

Conference place

Grenoble, France

Status

Published

Forskningsgrupp

  • Nano

ISBN/ISSN/Övrigt

  • ISSN: 1873-5568
  • ISSN: 0167-9317