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InAs quantum dots and quantum wells grown on stacking-fault controlled InP nanowires with wurtzite crystal structure

Publiceringsår: 2011
Språk: Engelska
Publikation/Tidskrift/Serie: Applied Physics Letters
Volym: 99
Nummer: 13
Dokumenttyp: Artikel
Förlag: Amer Inst Physics


Heteroepitaxial growth of InAs was investigated on sidewalls of InP nanowires (NWs) using metal-organic vapor phase epitaxy. InAs quantum wells (QWs) with smooth surface were formed on the InP NWs having perfect wurtzite phase structure. On the other hand, InAs quantum dots (QDs) were formed on wurtzite InP NWs purposely introduced with stacking-fault segments. Photoluminescence from single NWs attributed to both QWs and QDs was observed. (C) 2011 American Institute of Physics. doi:10.1063/1.3646386



  • Physics and Astronomy
  • III-V semiconductors
  • indium compounds
  • photoluminescence
  • semiconductor growth
  • semiconductor quantum dots
  • semiconductor quantum
  • wells
  • stacking faults
  • vapour phase epitaxial growth


  • ISSN: 0003-6951

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