Webbläsaren som du använder stöds inte av denna webbplats. Alla versioner av Internet Explorer stöds inte längre, av oss eller Microsoft (läs mer här: * https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Var god och använd en modern webbläsare för att ta del av denna webbplats, som t.ex. nyaste versioner av Edge, Chrome, Firefox eller Safari osv.

Recent advances in semiconductor nanowire heterostructures

Författare

Summary, in English

Semiconductor nanowires have made a deep impact on materials science related research, and are being explored for applications in several disciplines. Many of these applications require heterostructures, which can be defined as the combination of two or more materials within the same nanowire structure. In this paper we briefly review the current state-of-the-art concerning epitaxial nanowire heterostructures. We discuss growth, understanding, and promising applications of such structures, which we divide into three categories: nanowire-substrate, axial, and radial heterostructures. For each of these categories, we review recent experimental results, and address possible difficulties and how they have been resolved. In addition, we also highlight interesting applications relying on heterostructures in nanowires. To illustrate that nanowires and their heterostructures have been grown in a plethora of materials, we pick examples from a wide range of semiconductor materials.

Publiceringsår

2011

Språk

Engelska

Sidor

7175-7184

Publikation/Tidskrift/Serie

CrystEngComm

Volym

13

Issue

24

Dokumenttyp

Artikel i tidskrift

Förlag

Royal Society of Chemistry

Ämne

  • Condensed Matter Physics

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 1466-8033