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Mass transport model for semiconductor nanowire growth

Publiceringsår: 2005
Språk: Engelska
Sidor: 13567-13571
Publikation/Tidskrift/Serie: JOURNAL OF PHYSICAL CHEMISTRY B
Volym: 109
Nummer: 28
Dokumenttyp: Artikel
Förlag: American Chemical Society


We present a mass transport model based on surface diffusion for metal-particle-assisted nanowire growth. The model explains the common observation that for III/V materials thinner nanowires are longer than thicker ones. We have grown GaP nanowires by metal-organic vapor phase epitaxy and compared our model calculations with the experimental nanowire lengths and radii. Moreover, we demonstrate that the Gibbs-Thomson effect can be neglected for III/V nanowires grown at conventional temperatures and pressures.



  • Physics and Astronomy


  • ISSN: 1520-6106

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