Mass transport model for semiconductor nanowire growth

Summary, in English

We present a mass transport model based on surface diffusion for metal-particle-assisted nanowire growth. The model explains the common observation that for III/V materials thinner nanowires are longer than thicker ones. We have grown GaP nanowires by metal-organic vapor phase epitaxy and compared our model calculations with the experimental nanowire lengths and radii. Moreover, we demonstrate that the Gibbs-Thomson effect can be neglected for III/V nanowires grown at conventional temperatures and pressures.

• Författare: Jonas Johansson; CPT Svensson; Thomas Mårtensson; Lars Samuelson; Werner Seifert
• Avdelning/ar: Fasta tillståndets fysik
• Publiceringsår: 2005
• Språk: Engelska
• Sidor: 13567-13571
• Publikation/Tidskrift/Serie: The Journal of Physical Chemistry Part B
• Volym: 109
• Issue: 28
• Länkar: http://dx.doi.org/10.1021/jp051702j
• Dokumenttyp: Artikel i tidskrift
• Förlag: The American Chemical Society (ACS)
• Ämne: Condensed Matter Physics
• Status: Published
• ISBN/ISSN/Övrigt: ISSN: 1520-5207