Meny

Du är här

Degenerate p-doping of InP nanowires for large area tunnel diodes

Publiceringsår: 2011
Språk: Engelska
Sidor:
Publikation/Tidskrift/Serie: Applied Physics Letters
Volym: 99
Nummer: 25
Dokumenttyp: Artikel
Förlag: American Institute of Physics

Sammanfattning

We have investigated p-doping of InP nanowires using diethyl zinc. Two-terminal devices showed non-linear source-drain characteristics and p-type gate dependence. Electron beam induced current measurements were employed to determine minority carrier diffusion lengths. We used large-area tunnel diodes to demonstrate degenerate doping, showing peak current densities of up to 0.11 A/cm(2) and room temperature peak to valley current ratios of 5.3. These results demonstrate that high p- and n-doping, paired with sharp doping profiles, can be achieved in InP nanowires. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3669697]

Disputation

Nyckelord

  • Technology and Engineering

Övriga

Published
Yes
  • ISSN: 0003-6951

Box 117, 221 00 LUND
Telefon 046-222 00 00 (växel)
Telefax 046-222 47 20
lu [at] lu [dot] se

Fakturaadress: Box 188, 221 00 LUND
Organisationsnummer: 202100-3211
Om webbplatsen