Javascript is not activated in your browser. This website needs javascript activated to work properly.
Du är här

Tunnel Field-Effect Transistors Based on InP-GaAs Heterostructure Nanowires.

Publiceringsår: 2012
Språk: Engelska
Sidor: 3109-3113
Publikation/Tidskrift/Serie: ACS Nano
Volym: 6
Nummer: 4
Dokumenttyp: Artikel
Förlag: American Chemical Society


We present tunneling field-effect transistors fabricated from InP-GaAs heterostructure nanowires with an n-i-p doping profile, where the intrinsic InP region is modulated by a top gate. The devices show an inverse subthreshold slope down to 50 mV/dec averaged over two decades with an on/off current ratio of approximately 10(7) for a gate voltage swing (V(GS)) of 1 V and an on-current of 2.2 μA/μm. Low-temperature measurements suggest a mechanism of trap-assisted tunneling, possibly explained by a narrow band gap segment of InGaAsP.



  • Technology and Engineering


  • ISSN: 1936-086X

Box 117, 221 00 LUND
Telefon 046-222 00 00 (växel)
Telefax 046-222 47 20
lu [at] lu [dot] se

Fakturaadress: Box 188, 221 00 LUND
Organisationsnummer: 202100-3211
Om webbplatsen