Tunnel Field-Effect Transistors Based on InP-GaAs Heterostructure Nanowires.
Författare
Summary, in English
We present tunneling field-effect transistors fabricated from InP-GaAs heterostructure nanowires with an n-i-p doping profile, where the intrinsic InP region is modulated by a top gate. The devices show an inverse subthreshold slope down to 50 mV/dec averaged over two decades with an on/off current ratio of approximately 10(7) for a gate voltage swing (V(GS)) of 1 V and an on-current of 2.2 μA/μm. Low-temperature measurements suggest a mechanism of trap-assisted tunneling, possibly explained by a narrow band gap segment of InGaAsP.
Publiceringsår
2012
Språk
Engelska
Sidor
3109-3113
Publikation/Tidskrift/Serie
ACS Nano
Volym
6
Issue
4
Dokumenttyp
Artikel i tidskrift
Förlag
The American Chemical Society (ACS)
Ämne
- Nano Technology
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 1936-086X