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High frequency vertical InAs nanowire MOSFETs integrated on Si substrates

Publiceringsår: 2012
Språk: Engelska
Sidor: 350-353
Publikation/Tidskrift/Serie: Physica status solidi (c)
Volym: 9
Nummer: 2
Dokumenttyp: Konferensbidrag
Förlag: Wiley-Blackwell Publishing, Inc


RF and DC characterization of vertical InAs nanowire MOSFET on Si substrates are presented. Nanowire arrays are epitaxially integrated on Si substrates by use of a thin InAs buffer layer. For device fabrication, high-k HfO2 gate dielectric and wrap-gates are used. Post-deposition annealing of the high-k is evaluated by comparing one annealed and one not-annealed sample. The annealed sample show better DC characteristics in terms of transconductance, g(m) = 155 mS/mm, and on-current, I-on = 550 mA/mm. Box plots of on-current, on-resistance and transconductance for all 190-nanowire-array transistors on the annealed sample suggest that the electrical properties of the nanowires are preserved when scaling the nanowire diameter. Finally, high frequency characterisation yields a unity current gain cut-off frequency of f(t) = 9.3 GHz for the annealed sample and f(t) = 2.0 GHz for the not-annealed sample. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim



  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics
  • high-k
  • annealing
  • InAs
  • high frequency
  • nanowire


38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week
Berlin, Germany
  • ISSN: 1862-6351

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