Photoemission study of LT-GaAs
Författare
Summary, in English
Avdelning/ar
Publiceringsår
2004
Språk
Engelska
Sidor
234-238
Publikation/Tidskrift/Serie
Proceedings of the European Materials Research Society Fall Meeting, Symposium B (Journal of Alloys and Compounds)
Volym
382
Issue
1-2
Dokumenttyp
Konferensbidrag
Förlag
Elsevier
Ämne
- Physical Sciences
- Natural Sciences
Nyckelord
- crystal growth
- semiconductors
- synchrotron radiation
- photoemission
- spectroscopy
- valence band
- antisite defect
- gallium arsenide
- molecular beam epitaxy
Conference name
European Materials Research Society Fall Meeting, 2003
Conference date
2003-09-15 - 2003-09-19
Conference place
Warsaw, Poland
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 0925-8388