Meny

Javascript is not activated in your browser. This website needs javascript activated to work properly.
Du är här

Role of surface diffusion in chemical beam epitaxy of InAs nanowires

Författare:
Publiceringsår: 2004
Språk: Engelska
Sidor: 1961-1964
Publikation/Tidskrift/Serie: Nano Letters
Volym: 4
Nummer: 10
Dokumenttyp: Artikel
Förlag: American Chemical Society

Sammanfattning

We present growth studies of InAs nanowires nucleated from lithographically positioned Au seeds on InAs (111)B substrates. The nanowires are grown in a chemical beam epitaxy system and exhibit high aspect ratios and high homogeneity in length and width. Investigations of wire growth rate as a function of diameter, density, and time were performed and the results indicate that 80% of the growth is due to In species diffusing from the (111)B substrate surface. Furthermore, we have established that the diffusion length on the {110} wire side surfaces exceeds 10 mum. We also observe a decreasing length growth rate with increasing wire diameter.

Disputation

Nyckelord

  • Technology and Engineering

Övriga

Published
Yes
  • ISSN: 1530-6984

Box 117, 221 00 LUND
Telefon 046-222 00 00 (växel)
Telefax 046-222 47 20
lu [at] lu [dot] se

Fakturaadress: Box 188, 221 00 LUND
Organisationsnummer: 202100-3211
Om webbplatsen