Webbläsaren som du använder stöds inte av denna webbplats. Alla versioner av Internet Explorer stöds inte längre, av oss eller Microsoft (läs mer här: * https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Var god och använd en modern webbläsare för att ta del av denna webbplats, som t.ex. nyaste versioner av Edge, Chrome, Firefox eller Safari osv.

Picosecond time-resolved x-ray refectivity of a laser-heated amorphous carbon film

Författare

Summary, in English

We demonstrate thin film x-ray reflectivity measurements with picosecond time resolution. Amorphous carbon films with a thickness of 46 nm were excited with laser pulses characterized by 100 fs duration, a wavelength of 800 nm, and a fluence of 70 mJ/cm(2). The laser-induced stress caused a rapid expansion of the thin film followed by a relaxation of the film thickness as heat diffused into the silicon substrate. We were able to measure changes in film thickness as small as 0.2 nm. The relaxation dynamics are consistent with a model which accounts for carrier-enhanced substrate heat diffusivity. (C) 2011 American Institute of Physics. [doi:10.1063/1.3562967]

Avdelning/ar

Publiceringsår

2011

Språk

Engelska

Publikation/Tidskrift/Serie

Applied Physics Letters

Volym

98

Issue

10

Dokumenttyp

Artikel i tidskrift

Förlag

American Institute of Physics (AIP)

Ämne

  • Atom and Molecular Physics and Optics

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 0003-6951