Performance evaluation of N-well/P-sub photodiodes in 65nm CMOS process
Författare
Summary, in English
This work explores the n-well/p-substrate photodiode in a deep submicron CMOS process. A CMOS chip is designed featuring different structures of the photodiode. When characterized at a wavelength of 850nm DC responsivities between 0.12 and 0.16 A/W and 3-dB bandwidths of about 6 MHz with a roll-off of about 5.5dB/decade are measured. These investigations are very useful in designing the transimpedance amplifier and equalizer for a fully integrated optical receiver. According to the authors’ knowledge it is the first reported study on n-well/p-sub photodiodes in a 65nm CMOS technology.
Avdelning/ar
Publiceringsår
2013
Språk
Engelska
Sidor
135-136
Publikation/Tidskrift/Serie
[Host publication title missing]
Länkar
Dokumenttyp
Konferensbidrag
Förlag
IEEE - Institute of Electrical and Electronics Engineers Inc.
Ämne
- Electrical Engineering, Electronic Engineering, Information Engineering
Nyckelord
- photodiodes
- optical communication
- CMOS technology
- optical receivers
- photodetectors
Conference name
6th IEEE/International Conference on Advanced Infocomm Technology (ICAIT)
Conference date
2013-07-06 - 2013-07-09
Conference place
Hsinchu, Taiwan
Status
Published
Projekt
- Distributed antenna systems for efficient wireless systems
Forskningsgrupp
- Analog RF
ISBN/ISSN/Övrigt
- ISBN: 978-1-4799-0464-8