Simultaneous growth mechanisms for Cu-seeded InP nanowires
Författare
Summary, in English
We report on epitaxial growth of InP nanowires (NWs) from Cu seed particles by metal-organic vapor phase epitaxy (MOVPE). Vertically-aligned straight nanowires can be achieved in a limited temperature range between 340 A degrees C and 370 A degrees C as reported earlier. In this paper we present the effect of the V/III ratio on nanowire morphology, growth rate, and particle configuration at a growth temperature of 350 A degrees C. Two regimes can be observed in the investigated range of molar fractions. At high V/III ratios nanowires grow from a solid Cu2In particle. At low V/III ratios, nanowire growth from two particle types occurs simultaneously: Growth from solid Cu2In particles, and significantly faster growth from In-rich particles. We discuss a possible growth mechanism relying on a dynamic interplay between vapor-liquid-solid (VLS) and vapor-solid-solid (VSS) growth. Our results bring us one step closer to the replacement of Au as seed particle material as well as towards a deeper understanding of particle-assisted nanowire growth.
Publiceringsår
2012
Språk
Engelska
Sidor
297-306
Publikation/Tidskrift/Serie
Nano Reseach
Volym
5
Issue
5
Dokumenttyp
Artikel i tidskrift
Förlag
Springer
Ämne
- Condensed Matter Physics
- Atom and Molecular Physics and Optics
Nyckelord
- Nanowires
- MOVPE
- MOCVD
- epitaxy
- InP
- Cu seed particle
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 1998-0124