Photoreflectance study of the fundamental optical properties of (Ga,Mn) As epitaxial films
Publikation/Tidskrift/Serie: Physical Review B (Condensed Matter and Materials Physics)
Dokumenttyp: Artikel i tidskrift
Förlag: American Physical Society
Fundamental optical properties of thin films of the (Ga,Mn) As diluted ferromagnetic semiconductor with low (1%-2%) and high (4%-6%) Mn content and of a reference GaAs film, grown by low-temperature molecular-beam epitaxy, have been investigated by photoreflectance (PR) spectroscopy. In addition, the films were subjected to complementary characterization by means of superconducting quantum interference device magnetometry, Raman spectroscopy, and high-resolution x-ray diffractometry. Thorough full-line-shape analysis of the PR spectra, which enabled determination of the E-0 electronic transition in (Ga,Mn) As, revealed significant differences between the energy band structures in the vicinity of the Gamma point of the Brillouin zone in the investigated (Ga,Mn) As films. In view of the experimental results obtained, the evolution of the valence band structure in (Ga,Mn) As with increasing Mn content is discussed, pointing to a merging of the Mn-related impurity band with the host GaAs valence band for high Mn content.
- Natural Sciences
- Physical Sciences
- ISSN: 1098-0121