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Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device

Författare:
Publiceringsår: 2003
Språk: Engelska
Sidor: 1881-1883
Publikation/Tidskrift/Serie: Applied Physics Letters
Volym: 83
Nummer: 9
Dokumenttyp: Artikel
Förlag: American Institute of Physics

Sammanfattning

By tailoring the boundary of a narrow semiconductor channel to break its symmetry, we have realized a type of nanometer-scale nonlinear device, which we refer to as self-switching device (SSD). An applied voltage V not only changes the potential profile along the channel direction, but also either widens or narrows the effective channel depending on the sign of V. This results in a diode-like characteristic but without the use of any doping junction or barrier structure. The turn-on voltage can also be widely tuned from virtually zero to more than 10 V, by simply adjusting the channel width. The planar and two-terminal structure of the SSD also allows SSD-based circuits to be realized by only one step of lithography. (C) 2003 American Institute of Physics.

Disputation

Nyckelord

  • Physics and Astronomy

Övriga

Published
Yes
  • ISSN: 0003-6951

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