Javascript is not activated in your browser. This website needs javascript activated to work properly.
Du är här

Site control of InAs quantum dots on a patterned InP surface: As/P exchange reactions

Publiceringsår: 2003
Språk: Engelska
Sidor: 310-316
Publikation/Tidskrift/Serie: Journal of Crystal Growth
Volym: 248
Dokumenttyp: Artikel
Förlag: Elsevier


In this paper. we present the effect of annealing temperature and annealing time on InAs site-controlled quantum dot growth. Individual InAs quantum dots formed by self-assembling have been positioned into holes, created by partial overgrowth of electron beam induced nano-carbon deposits by metal organic vapor phase epitaxy. As/P exchange reactions produce material sufficient for selective dot nucleation in the holes. Results. showing that As/P exchange reactions occur even when capping the dots with InP are presented. (C) 2002 Elsevier Science B.V. All rights reserved.



  • Physics and Astronomy
  • nanomaterials
  • nanostructures
  • metalorganic vapor phase epitaxy
  • semiconducting IIIV materials


  • ISSN: 0022-0248

Box 117, 221 00 LUND
Telefon 046-222 00 00 (växel)
Telefax 046-222 47 20
lu [at] lu [dot] se

Fakturaadress: Box 188, 221 00 LUND
Organisationsnummer: 202100-3211
Om webbplatsen