Site control of InAs quantum dots on a patterned InP surface: As/P exchange reactions
Publikation/Tidskrift/Serie: Journal of Crystal Growth
In this paper. we present the effect of annealing temperature and annealing time on InAs site-controlled quantum dot growth. Individual InAs quantum dots formed by self-assembling have been positioned into holes, created by partial overgrowth of electron beam induced nano-carbon deposits by metal organic vapor phase epitaxy. As/P exchange reactions produce material sufficient for selective dot nucleation in the holes. Results. showing that As/P exchange reactions occur even when capping the dots with InP are presented. (C) 2002 Elsevier Science B.V. All rights reserved.
- Electrical Engineering, Electronic Engineering, Information Engineering
- Condensed Matter Physics
- metalorganic vapor phase epitaxy
- semiconducting IIIV materials
- ISSN: 0022-0248