Nanowire resonant tunneling diodes
Författare
Summary, in English
Semiconductor heterostructures and their implementation into electronic and photonic devices have had tremendous impact on science and technology. In the development of quantum nanoelectronics, one-dimensional (1D) heterostructure devices are receiving a lot of interest. We report here functional 1D resonant tunneling diodes obtained via bottom-up assembly of designed segments of different semiconductor materials in III/V nanowires. The emitter, collector, and the central quantum dot are made from InAs and the barrier material from InP. Ideal resonant tunneling behavior, with peak-to-valley ratios of up to 50:1 and current densities of 1 nA/mum(2) was observed at low temperatures. (C) 2002 American Institute of Physics.
Publiceringsår
2002
Språk
Engelska
Sidor
4458-4460
Publikation/Tidskrift/Serie
Applied Physics Letters
Volym
81
Issue
23
Dokumenttyp
Artikel i tidskrift
Förlag
American Institute of Physics (AIP)
Ämne
- Chemical Sciences
- Condensed Matter Physics
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 0003-6951