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Nanowire resonant tunneling diodes

Publiceringsår: 2002
Språk: Engelska
Sidor: 4458-4460
Publikation/Tidskrift/Serie: APPLIED PHYSICS LETTERS
Volym: 81
Nummer: 23
Dokumenttyp: Artikel
Förlag: AMER INST PHYSICS

Sammanfattning

Semiconductor heterostructures and their implementation into electronic and photonic devices have had tremendous impact on science and technology. In the development of quantum nanoelectronics, one-dimensional (1D) heterostructure devices are receiving a lot of interest. We report here functional 1D resonant tunneling diodes obtained via bottom-up assembly of designed segments of different semiconductor materials in III/V nanowires. The emitter, collector, and the central quantum dot are made from InAs and the barrier material from InP. Ideal resonant tunneling behavior, with peak-to-valley ratios of up to 50:1 and current densities of 1 nA/mum(2) was observed at low temperatures. (C) 2002 American Institute of Physics.

Disputation

Nyckelord

  • Physics and Astronomy

Övriga

Published
Yes
  • ISSN: 0003-6951

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