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Three-dimensional integrated resonant tunneling transistor with multiple peaks

Publiceringsår: 2002
Språk: Engelska
Sidor: 1905-1907
Publikation/Tidskrift/Serie: Applied Physics Letters
Volym: 81
Nummer: 10
Dokumenttyp: Artikel
Förlag: Amer Inst Physics


A resonant tunneling transistor was manufactured by integrating a self-aligned metallic gate 30 nm above and 100 nm below resonant tunneling diodes. The Schottky depletion around the gate controls the current to a confined vertical channel with a conduction area in the range of 100x100 nm. Due to the three-dimensional asymmetric placement of the gate with respect to the tunneling diodes, modulation of both the peak voltage and peak current was achieved.



  • Physics and Astronomy


  • ISSN: 0003-6951

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