Investigation of polymethylmethacrylate resist residues using photoelectron microscopy
Publikation/Tidskrift/Serie: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Förlag: American Institute of Physics
Quantitative photoelectron spectromicroscopy has been used to study polymethylmethacrylate (PMMA) resist residues on SiO2 surfaces after electron beam exposure and resist development, It was found that correctly exposed and developed PMMA leaves residues with an average thickness of about 1 nm. Higher exposure doses result in the decrease in film thickness, but with residues of about 0.5 mn. The technique can be applied as a powerful tool for surface and interface quality control in technology of electronic devices.
- Physics and Astronomy
20th North American Conference on Molecular Beam Epitaxy
- ISSN: 1071-1023