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Investigation of polymethylmethacrylate resist residues using photoelectron microscopy

In English

Författare

Summary, in English

Quantitative photoelectron spectromicroscopy has been used to study polymethylmethacrylate (PMMA) resist residues on SiO2 surfaces after electron beam exposure and resist development, It was found that correctly exposed and developed PMMA leaves residues with an average thickness of about 1 nm. Higher exposure doses result in the decrease in film thickness, but with residues of about 0.5 mn. The technique can be applied as a powerful tool for surface and interface quality control in technology of electronic devices.

Publiceringsår

2002

Språk

Engelska

Sidor

1139-1142

Publikation/Tidskrift/Serie

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Volym

20

Issue

3

Dokumenttyp

Konferensbidrag

Förlag

American Institute of Physics (AIP)

Ämne

  • Physical Sciences
  • Natural Sciences
  • Condensed Matter Physics
  • Atom and Molecular Physics and Optics

Conference name

20th North American Conference on Molecular Beam Epitaxy

Conference date

2001-10-01 - 2001-10-03

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 1520-8567
  • ISSN: 1071-1023