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Anti-domain-free GaP, grown in atomically flat (001) Si sub-mu m-sized openings

Publiceringsår: 2002
Språk: Engelska
Sidor: 4546-4548
Publikation/Tidskrift/Serie: Applied Physics Letters
Volym: 80
Nummer: 24
Dokumenttyp: Artikel
Förlag: American Institute of Physics


We demonstrate a method for growth of GaP nanocrystals on Si(001), developed to avoid defects related to antiphase domain boundaries in the proximity of the GaP/Si interface. The technique is based on sub-mum-sized selective-area epitaxy of GaP on atomically flat Si in masked openings. We have used field-emission scanning electron microscopy together with transmission electron microscopy to illustrate the method with examples of monocrystalline GaP nanocrystals. The optical properties of the nanocrystals were investigated by low-temperature cathodoluminescence.



  • Physics and Astronomy


  • ISSN: 0003-6951

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