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Ultrahigh vacuum scanning probe investigations of metal induced void formation in SiO2/Si(111))

Författare:
Publiceringsår: 2002
Språk: Engelska
Sidor: 226-229
Publikation/Tidskrift/Serie: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volym: 20
Nummer: 1
Dokumenttyp: Konferensbidrag
Förlag: A V S AMER INST PHYSICS

Sammanfattning

Using scanning electron microscopy guidance, atomically resolved scanning tunneling microscopy investigations inside openings formed during the decomposition of a thick SiO2 film on a Si(111) surface have been performed. We report, for the first time, the presence of Ni atoms inside self-formed openings. The SiO2 decomposition as a function of annealing temperature and time was studied. By comparing self-formed and lithographically designed openings in the SiO2 layer we have shown that Ni contamination of the SiO2/Si(111) has a profound effect on the formation of self-induced lateral oxide openings. (C) 2002 American Vacuum Society.

Disputation

Nyckelord

  • Physics and Astronomy
  • Ultrahigh vacuum scanning tunneling microscopy (UHVSTM)

Övriga

6th International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors
2014-04-24
Napa Valley, CA
Published
Yes
  • ISSN: 1071-1023

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