Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor

Summary, in English

An n-type InAs/InAsP heterostructure nanowire field-effect transistor has been fabricated and compared with a homogeneous InAs field-effect transistor. For the same device geometry, by introduction of the heterostructure, the threshold voltage is shifted 4 V, the maximum current on-off ratio is enhanced by a factor of 10 000, and the subthreshold swing is lowered by a factor 4 compared to the homogeneous transistor. At the same time, the drive current remains constant for a fixed gate overdrive. A single nanowire heterostructure transistor has a transconductance of 5 mu A/V at a low source-drain voltage of 0.3 V. For the homogeneous InAs transistor, we deduced a high electron mobility of 1500 cm(2)/Vs.

• Författare: Erik Lind; Ann Persson; Lars Samuelson; Lars-Erik Wernersson
• Avdelning/ar: Institutionen för elektro- och informationsteknik; Fasta tillståndets fysik
• Publiceringsår: 2006
• Språk: Engelska
• Sidor: 1842-1846
• Publikation/Tidskrift/Serie: Nano Letters
• Volym: 6
• Issue: 9
• Länkar: http://dx.doi.org/10.1021/nl052468b
• Dokumenttyp: Artikel i tidskrift
• Förlag: The American Chemical Society (ACS)
• Ämne: Nano Technology
• Status: Published
• ISBN/ISSN/Övrigt: ISSN: 1530-6992