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ZnTe nanowires grown on GaAs(100) substrates by molecular beam epitaxy

Författare:
  • E. Janik
  • Janusz Sadowski (Dr)
  • P. Dluzewski
  • S. Kret
  • L. T. Baczewski
  • A. Petroutchik
  • E. Lusakowska
  • J. Wrobel
  • W. Zaleszczyk
  • G. Karczewski
  • T. Wojtowicz
  • A. Presz
Publiceringsår: 2006
Språk: Engelska
Publikation/Tidskrift/Serie: APPLIED PHYSICS LETTERS
Volym: 89
Nummer: 13
Dokumenttyp: Artikel
Förlag: AMER INST PHYSICS

Sammanfattning

ZnTe nanowires with an average diameter of about 30 nm and lengths above 1 mu m were grown on GaAs(100) substrate by molecular beam epitaxy. The growth process was based on the Au-catalyzed vapor-liquid-solid mechanism. A thin gold layer (3-20 angstrom thick) annealed in high vacuum prior to the nanowire growth was used as a source of catalytic nanoparticles. The nanowires are inclined about 55 degrees to the (100) substrate surface normal. They have a zinc-blende crystal structure and their growth axis is < 111 >.

Disputation

Nyckelord

  • Medicine and Health Sciences

Övriga

Published
Yes
  • ISSN: 0003-6951

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