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Domain-wall controlled (Ga,Mn)As nanostructures for spintronic applications

In English

Författare

  • Tadeusz Wosinski
  • Tomasz Andrearczyk
  • Tadeusz Figielski
  • Jerzy Wrobel
  • Janusz Sadowski

Summary, in English

Valence-band structure and magnetic properties, especially magnetic anisotropies, in the (Ga,Mn)As diluted ferromagnetic semiconductor are shortly discussed. Next, magneto-resistive, cross-like nanostructures fabricated by electron-beam lithography patterning and chemical etching from thin (Ga,Mn)As epitaxial layers are described. The nanostructures, composed of two perpendicular nanostripes crossing in the middle of their length, represent four-terminal devices, in which an electric current can be driven through any of the two nanostripes. In these devices, which make use of the patterning-induced magnetic anisotropy, a novel magneto-resistive memory effect related to a rearrangement of magnetic domain walls in the central part of the device, has been demonstrated. The effect consists in that the zerb-field resistance of a nanostripe depends on the direction of previously applied magnetic field. The nanostructures can thus work as two-state devices providing basic elements of nonvolatile memory cells. (C) 2012 Elsevier B.V. All rights reserved.

Publiceringsår

2013

Språk

Engelska

Sidor

128-134

Publikation/Tidskrift/Serie

Physica E: Low-Dimensional Systems and Nanostructures

Volym

51

Dokumenttyp

Artikel i tidskrift

Förlag

Elsevier

Ämne

  • Natural Sciences
  • Physical Sciences

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 1386-9477