Au-free epitaxial growth of InAs nanowires
Publikation/Tidskrift/Serie: Nano Letters
Förlag: American Chemical Society
III-V nanowires have been fabricated by metal-organic vapor-phase epitaxy without using Au or other metal particles as a catalyst. Instead, prior to growth, a thin SiOx layer is deposited on the substrates. Wires form on various III-V substrates as well as on Si. They are nontapered in thickness and exhibit a hexagonal cross-section. From high-resolution X-ray diffraction, the epitaxial relation between wires and substrates is demonstrated and their crystal structure is determined.
- Physics and Astronomy
- ISSN: 1530-6984