Demonstration of Defect-Free and Composition Tunable Ga(x)In(1-x)Sb Nanowires.
Författare
Summary, in English
The Ga(x)In(1-x)Sb ternary system has many interesting material properties, such as high carrier mobilities and a tunable range of bandgaps in the infrared. Here we present the first report on the growth and compositional control of Ga(x)In(1-x)Sb material grown in the form of nanowires from Au seeded nanoparticles by metalorganic vapor phase epitaxy. The composition of the grown Ga(x)In(1-x)Sb nanowires is precisely controlled by tuning the growth parameters where x varies from 1 to ∼0.3. Interestingly, the growth rate of the Ga(x)In(1-x)Sb nanowires increases with diameter, which we model based on the Gibbs-Thomson effect. Nanowire morphology can be tuned from high to very low aspect ratios, with perfect zinc blende crystal structure regardless of composition. Finally, electrical characterization on nanowire material with a composition of Ga(0.6)In(0.4)Sb showed clear p-type behavior.
Publiceringsår
2012
Språk
Engelska
Sidor
4914-4919
Publikation/Tidskrift/Serie
Nano Letters
Volym
12
Issue
9
Dokumenttyp
Artikel i tidskrift
Förlag
The American Chemical Society (ACS)
Ämne
- Nano Technology
Nyckelord
- nanowire
- III-V semiconductor
- antimonide
- GaInSb
- zinc blende
- structure
- MOSFET
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 1530-6992