Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors

Summary, in English

By measuring 1/f-noise in wrap-gated InAs nanowire metal-oxide-semiconductor field-effect transistors with transport dominating, controllably, in either an inner, core channel, or an outer, surface channel, it is possible to accurately evaluate the material quality related Hooge-parameter, alpha(H), with reduced interference from the surface properties. The devices show low values of alpha(H) similar to 4 x 10(-5). At forward bias, where the data suggest that the 1/f-noise is dominated by the contribution from the high-k interface, devices show low values of normalized noise spectral density. (C) 2013 AIP Publishing LLC.

• Författare: Karl-Magnus Persson; B. G. Malm; Lars-Erik Wernersson
• Avdelning/ar: Institutionen för elektro- och informationsteknik; NanoLund: Centre for Nanoscience
• Publiceringsår: 2013
• Språk: Engelska
• Publikation/Tidskrift/Serie: Applied Physics Letters
• Volym: 103
• Issue: 3
• Fulltext: - 1 MB; Download statistics
• Länkar: http://ieeexplore.ieee.org/Xplore/defdeny.jsp?url=http%3A%2F%2Fieeexplore.ieee.org%2Fstamp%2Fstamp.jsp%3Ftp%3D%26arnumber%3D6560855%26userType%3Dinst&denyReason=-133&arnumber=6560855&productsMatched=null&userType=inst; http://dx.doi.org/10.1063/1.4813850
• Dokumenttyp: Artikel i tidskrift
• Förlag: American Institute of Physics (AIP)
• Ämne: Electrical Engineering, Electronic Engineering, Information Engineering
• Nyckelord: Nanowire; Noise; mobility fluctuations; number fluctutations; InAs; Transistor; MOSFET; FET; high-k; hf02; al203
• Status: Published
• Projekt: EIT_WWW Wireless with Wires
• Forskningsgrupp: Nano
• ISBN/ISSN/Övrigt: ISSN: 0003-6951