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Vertical wrap-gated nanowire transistors

Författare:
Publiceringsår: 2006
Språk: Engelska
Sidor: S227-S230
Publikation/Tidskrift/Serie: Nanotechnology
Volym: 17
Nummer: 11
Dokumenttyp: Artikel
Förlag: IOP Publishing Ltd.

Sammanfattning

We present a process for fabricating a field-effect transistor based on vertically standing InAs nanowires and demonstrate initial device characteristics. The wires are grown by chemical beam epitaxy at lithographically defined locations. Wrap gates are formed around the base of the wires through a number of deposition and etch steps. The fabrication is based on standard III - V processing and includes no random elements or single nanowire manipulation.

Disputation

Nyckelord

  • Physics and Astronomy

Övrigt

Published
Yes
  • ISSN: 0957-4484

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