Current−Voltage Characterization of Individual As-Grown Nanowires Using a Scanning Tunneling Microscope
Författare
Summary, in English
Utilizing semiconductor nanowires for (opto)- electronics requires exact knowledge of their current−voltage properties. We report accurate on-top imaging and I−V characterization of individual as-grown nanowires, using a subnanometer resolution scanning tunneling microscope with no need for additional microscopy tools, thus allowing versatile application. We form Ohmic contacts to InP and InAs nanowires without any sample processing, followed by quantitative measurements of diameter dependent I−V properties with a very small spread in measured values compared to standard techniques.
Publiceringsår
2013
Språk
Engelska
Sidor
5182-5189
Publikation/Tidskrift/Serie
Nano Letters
Volym
13
Issue
11
Dokumenttyp
Artikel i tidskrift
Förlag
The American Chemical Society (ACS)
Ämne
- Nano Technology
Nyckelord
- semiconductor nanowire
- scanning tunneling microscopy
- Ohmic contact
- nanowire contacts
- resistivity
Status
Published
Forskningsgrupp
- Nanometer structure consortium (nmC)
ISBN/ISSN/Övrigt
- ISSN: 1530-6992