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Zincblende-to-wurtzite interface improvement by group III loading in Au-seeded GaAs nanowires

In English

Författare

Summary, in English

Achieving control of the crystal structure is essential in III-V nanowires, since twin defects, stacking faults and uncontrolled zincblende-wurtzite polytypism could have detrimental effects on the physical properties. In addition, precise control of the crystal phases also opens up the possibility of homomaterial bandgap engineering. Here, we show by ex situ chemical analysis of the alloy seed particle that Ga-rich conditions are required for growth of wurtzite GaAs nanowires using Au seed particles in MOVPE. Based on this understanding, we propose and demonstrate a growth procedure to significantly improve the crystal structure quality of the zincblende-to-wurtzite transition in GaAs nanowire heterostructures. ((c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Publiceringsår

2013

Språk

Engelska

Sidor

855-859

Publikation/Tidskrift/Serie

Physica Status Solidi. Rapid Research Letters

Volym

7

Issue

10

Dokumenttyp

Artikel i tidskrift

Förlag

John Wiley & Sons Inc.

Ämne

  • Condensed Matter Physics

Nyckelord

  • GaAs
  • nanowires
  • polytypism
  • heterostructures
  • metal-organic vapour
  • phase epitaxy

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 1862-6254