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RF Characterization of Vertical InAs Nanowire MOSFETs with f(t) and f(max) above 140 GHz

In English

Författare

Summary, in English

We present RF characterization of vertical gateall- around InAs nanowire MOSFETs integrated on Si substrates with peak f(t) = 142 GHz and f(max) = 155 GHz, representing the record for vertical nanowire transistors. The devices has an L-g approximate to 150 nm with a g(m)=700 mS/mm for a nanowire diameter of 38 nm and an EOT = 1.4 nm. The high values of f(t) is achieved through electron beam lithography patterning of the gate and drain contact which substantially decreases the parasitic capacitances through reduction of the overlay capacitance, which is in good agreement with TCAD modeling.

Publiceringsår

2014

Språk

Engelska

Publikation/Tidskrift/Serie

26th International Conference on Indium Phosphideand Related Materials (IPRM)

Dokumenttyp

Konferensbidrag

Förlag

IEEE - Institute of Electrical and Electronics Engineers Inc.

Ämne

  • Electrical Engineering, Electronic Engineering, Information Engineering

Conference name

26th International Conference on Indium Phosphide and Related Materials (IPRM)

Conference date

2014-05-11 - 2014-05-15

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 1092-8669