Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self-Assembled Organic Coatings
Författare
Summary, in English
Indium arsenide nanowires are grown directly on silicon substrates (see figure and cover) using a method employing self-assembled organic coatings to create oxide-based growth templates. High-performance materials, such as InAs, could have great impact on future nanoelectronics if integrated with Si, but integration has so far been hard to realize with other methods.
Publiceringsår
2007
Språk
Engelska
Sidor
1801-1801
Publikation/Tidskrift/Serie
Advanced Materials
Volym
19
Dokumenttyp
Artikel i tidskrift
Förlag
John Wiley & Sons Inc.
Ämne
- Chemical Sciences
- Atom and Molecular Physics and Optics
- Condensed Matter Physics
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 1521-4095