Du är här

Heterostructures incorporated in one-dimensional semiconductor materials and devices

Författare:
Publiceringsår: 2003
Språk: Engelska
Sidor: 253-260
Publikation/Tidskrift/Serie: Physics and Semiconductors 2002 : Proceedings of the 26th International Conference on the Physics of Semiconductors
Volym: 171
Dokumenttyp: Del av eller Kapitel i bok
Förlag: Inst of Physics Pub Inc

Sammanfattning

As an alternative to traditional top-down techniques for fabrication of one-dimensional devices we here report an approach wherein a bottom-up technique is used to create one-dimensional device structures. We use the vapor-liquid-solid growth method, in which a catalytically active gold nanoparticle forms a eutectic alloy with the nanowire constituents. Our method of growth allows atomically abrupt interfaces between different III-V semiconductors, also for highly mismatched combinations for which conventional growth techniques can not be used. Special emphasis is put on the processing of ohmic contacts to nanowires. We describe the transport properties of nanowires containing heterostructures from which band off-sets between two different binary materials are determined. Finally, we report the creation of double-barrier resonant tunneling diodes in which a single InAs quantum dot surrounded by InP tunnel barriers acts as the active element in the device, resulting in energetically sharp resonant tunneling peaks reflecting tunneling into zero-dimensional states of the quantum dot.

Disputation

Nyckelord

  • Chemistry

Övriga

Published
  • ISBN: 0750309245

Box 117, 221 00 LUND
Telefon 046-222 00 00 (växel)
Telefax 046-222 47 20
lu [at] lu [dot] se

 

Fakturaadress: Box 188, 221 00 LUND
Organisationsnummer: 202100-3211
Om webbplatsen