Dissociative H2O adsorption on the Si (100) 2× 1 and Ge (100) 2× 1 surfaces
Författare
Summary, in English
Core-level spectroscopy and valence band photoelectron spectroscopy were used to study H2O adsorption on the Si(100) and Ge(100) surfaces. We find that H2O dissociates into H and OH on both surfaces at 300 K. The H and OH are adsorbed in on top positions on the surface. The OH group is tilted with respect to the surface normal on the Si(100) surface. We consider two possible interpretations for the results from the H2O dosed Ge(100) surface at 300 K. Either a similar model as for the Si(100) surface or a model based on two adsorption sites.
Publiceringsår
1991
Språk
Engelska
Sidor
297-300
Publikation/Tidskrift/Serie
Vacuum
Volym
42
Issue
4
Dokumenttyp
Artikel i tidskrift
Förlag
Elsevier
Ämne
- Electrical Engineering, Electronic Engineering, Information Engineering
Status
Published
Forskningsgrupp
- Electromagnetic theory
ISBN/ISSN/Övrigt
- ISSN: 0042-207X