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850/900/1800/1900MHz Quad-Band CMOS Medium Power Amplifier

Författare:
Publiceringsår: 2006
Språk: Engelska
Sidor: 403-406
Publikation/Tidskrift/Serie: Proceedings of European Microwave Week 2006
Dokumenttyp: Konferensbidrag

Sammanfattning

This paper presents a two-stage quad-band CMOS RF power amplifier. The power amplifier is fabricated in a 0.25 mum CMOS process. The measured 1-dB compression point between 800 and 900 MHz is 15 dBm plusmn 0.2 dB with maximum 18% PAE, and between 1800 and 1900MHz is 17.5dBm plusmn 0.7dB with maximum 17% PAE. The measured gains in the two bands are 23.6 dB plusmn 0.7 dB and 13 dB plusmn 2.1 dB, respectively.

Disputation

Nyckelord

  • Technology and Engineering

Övrigt

Manchester, UK
Published
Yes

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