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Heterostructures in one-dimensional nanowires

Författare:
Publiceringsår: 2002
Språk: Engelska
Sidor: 2
Publikation/Tidskrift/Serie: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
Dokumenttyp: Konferensbidrag
Förlag: Lund Univ

Sammanfattning

Chemical beam epitaxy has been used to grow III/V nanowires seeded from size selected Au aerosol particles. Both chemically uniform InAs wires as well as InAs wires containing one or several heterostructure interfaces were grown. The interfaces were characterized in a transmission electron microscope revealing atomically sharp interfaces and also that, barriers as thin as only 2-3 monolayers and up to several hundred nanometer could be inserted into homogenous InAs wires. Further more, electrical measurements on both homogenous wires and wires containing heterostructures have been performed to investigate the functionality of nanowire based device elements

Disputation

Nyckelord

  • Physics and Astronomy
  • monolayers
  • InAs-Au
  • nanowire based device elements
  • electrical measurements
  • transmission electron microscopy
  • atomically sharp interfaces
  • heterostructure interfaces
  • chemically uniform InAs wires
  • size selected Au aerosol particles
  • chemical beam epitaxy
  • III/V nanowires growth
  • one dimensional nanowires heterostructures
  • barriers

Övriga

Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
24-28 June 2002
Malmö, Sweden
Published
Yes

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