Heterostructures in one-dimensional nanowires

In English Chemical beam epitaxy has been used to grow III/V nanowires seeded from size selected Au aerosol particles. Both chemically uniform InAs wires as well as InAs wires containing one or several heterostructure interfaces were grown. The interfaces were characterized in a transmission electron microscope revealing atomically sharp interfaces and also that, barriers as thin as only 2-3 monolayers and up to several hundred nanometer could be inserted into homogenous InAs wires. Further more, electrical measurements on both homogenous wires and wires containing heterostructures have been performed to investigate the functionality of nanowire based device elements