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Electrical properties of InAs-based nanowires

Författare:
Publiceringsår: 2004
Språk: Engelska
Sidor: 449-452
Publikation/Tidskrift/Serie: AIP Conference Proceedings
Volym: 723
Dokumenttyp: Konferensbidrag
Förlag: AIP

Sammanfattning

Semiconductor nanowires are grown using chemical beam epitaxy and metal organic vapor phase epitaxy from size-selected gold nanoparticles acting as catalysts. By changing materials during the growth it is possible to form heterostructures both along the length of the nanowires but also in a core-shell fashion. In particular, incorporation of pairs of InP tunnel barriers in InAs nanowires has been used to fabricate single-electron transistors and resonant tunneling diodes

Disputation

Nyckelord

  • Technology and Engineering
  • InAs-InP
  • Au
  • resonant tunneling diodes
  • catalysts
  • heterostructures
  • semiconductor nanowires
  • electrical properties
  • chemical beam epitaxy
  • gold nanoparticles
  • metal organic vapor phase epitaxy
  • single electron transistors
  • InP tunnel barriers

Övriga

Electronic Properties of Synthetic Nanostructures. XVIII International Winterschool/Euroconference on Electronic Properties of Novel Materials
6-13 March 2004
Tirol, Austria
Published
Yes
  • ISSN: 0094-243X
  • CODEN: APCPCS

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