A resonant galvanically separated power MOSFET/IGBT gate driver
Författare
Summary, in English
Avdelning/ar
Publiceringsår
2004
Språk
Engelska
Sidor
3243-3247
Publikation/Tidskrift/Serie
2004 IEEE 35th Annual Power Electronics Specialists Conference
Dokumenttyp
Konferensbidrag
Förlag
IEEE - Institute of Electrical and Electronics Engineers Inc.
Ämne
- Other Electrical Engineering, Electronic Engineering, Information Engineering
Nyckelord
- galvanic separation
- bipolar gate-source voltage
- unipolar DC voltage
- IGBT driver
- resonant galvanically driver
- power MOSFET gate driver
- resonant circuit
- signal transfer
- DC-DC converter
Conference name
2004 IEEE 35th Annual Power Electronics Specialists Conference
Conference date
2004-06-20 - 2004-06-25
Conference place
Aachen, Germany
Status
Published
ISBN/ISSN/Övrigt
- ISBN: 0-7803-8399-0