Du är här

Spin relaxation in InAs nanowires studied by tunable weak antilocalization

Författare:
Publiceringsår: 2005
Språk: Engelska
Sidor: 205328-1-205328-5
Publikation/Tidskrift/Serie: Physical Review B. Condensed Matter and Materials Physics
Volym: 71
Dokumenttyp: Artikel
Förlag: American Physical Society

Sammanfattning

We report on a low-temperature magnetoconductance study to characterize the electrical and spin transport properties of n-type InAs nanowires grown by chemical beam epitaxy. A gate-controlled crossover from weak localization to weak antilocalization is observed. The measured magnetoconductance data agrees well with theory for one-dimensional quasi-ballistic systems and yields a spin relaxation length which decreases with increasing gate voltage.

Disputation

Nyckelord

  • Physics and Astronomy

Övriga

Published
Yes

Box 117, 221 00 LUND
Telefon 046-222 00 00 (växel)
Telefax 046-222 47 20
lu [at] lu [dot] se

 

Fakturaadress: Box 188, 221 00 LUND
Organisationsnummer: 202100-3211
Om webbplatsen