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InAs1-xPx Nanowires for Device Engineering

Publiceringsår: 2006
Språk: Engelska
Sidor: 403-407
Publikation/Tidskrift/Serie: Nano Letters
Volym: 6
Nummer: 3
Dokumenttyp: Artikel
Förlag: American Chemical Society


We present the growth of homogeneous InAs1-xPx nanowires as well as InAs1-xPx heterostructure segments in InAs nanowires with P
concentrations varying from 22% to 100%. The incorporation of P has been studied as a function of TBP/TBAs ratio, temperature, and diameter
of the wires. The crystal structure of the InAs as well as the InAs1-xPx segments were found to be wurtzite as determined from high-resolution
transmission electron microscopy. Furthermore, temperature-dependent electrical transport measurements were performed on individual
heterostructured wires to extract the conduction band offset of InAs1-xPx relative to InAs as a function of composition. From these measurements
we extract a value of the linear coefficient of the conduction band versus x of 0.6 eV and a nonlinear coefficient, or bowing parameter, of 0.2
eV. Finally, homogeneous InAs0.8P0.2 nanowires were shown to have a nondegenerate n-type doping and function as field-effect transistors at
room temperature.



  • Chemical Sciences
  • Condensed Matter Physics



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