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Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self-Assembled Organic Coatings

Publiceringsår: 2007
Språk: Engelska
Sidor: 1801-+
Publikation/Tidskrift/Serie: Advanced Materials
Volym: 19
Dokumenttyp: Artikel
Förlag: WILEY-V C H


Indium arsenide nanowires are grown directly on silicon substrates (see figure and cover) using a method employing self-assembled organic coatings to create oxide-based growth templates. High-performance materials, such as InAs, could have great impact on future nanoelectronics if integrated with Si, but integration has so far been hard to realize with other methods.



  • Technology and Engineering



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