Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self-Assembled Organic Coatings

Summary, in English

Indium arsenide nanowires are grown directly on silicon substrates (see figure and cover) using a method employing self-assembled organic coatings to create oxide-based growth templates. High-performance materials, such as InAs, could have great impact on future nanoelectronics if integrated with Si, but integration has so far been hard to realize with other methods.

• Författare: Thomas Mårtensson; Jakob Wagner; Emelie Hilner; Anders Mikkelsen; Claes Thelander; Julian Stangl; Jonas Ohlsson; Anders Gustafsson; Edvin Lundgren; Lars Samuelson; Werner Seifert
• Avdelning/ar: Fasta tillståndets fysik; Centrum för analys och syntes; Synkrotronljusfysik
• Publiceringsår: 2007
• Språk: Engelska
• Sidor: 1801-1801
• Publikation/Tidskrift/Serie: Advanced Materials
• Volym: 19
• Länkar: http://dx.doi.org/10.1002/adma.200700285
• Dokumenttyp: Artikel i tidskrift
• Förlag: John Wiley & Sons Inc.
• Ämne: Chemical Sciences; Atom and Molecular Physics and Optics; Condensed Matter Physics
• Aktiv: Published
• ISBN/ISSN/Övrigt: ISSN: 1521-4095