A novel frequency-doubling device based on three-terminal ballistic junction
Författare
Summary, in English
Avdelning/ar
Publiceringsår
2002
Språk
Engelska
Sidor
159-160
Publikation/Tidskrift/Serie
Device Research Conference (Cat. No.02TH8606)
Dokumenttyp
Konferensbidrag
Förlag
IEEE - Institute of Electrical and Electronics Engineers Inc.
Ämne
- Condensed Matter Physics
Nyckelord
- GaInAs-InP
- frequency multiplication
- room temperature
- GaInAs/InP quantum well structures
- high-electron-mobility QW structures
- trench gate-channel insulation
- one-dimensional lateral-FET
- 1D lateral-field-effect transistor
- T-shaped ballistic junction
- nonlinear electrical properties
- frequency-doubling device
- three-terminal ballistic junction
Conference name
Device Research Conference, 2002
Conference date
2002-06-24 - 2002-06-26
Conference place
Santa Barbara, CA, United States
Status
Published
ISBN/ISSN/Övrigt
- ISBN: 0-7803-7317-0