Substrate orientation: a way towards higher quality monolayer graphene growth on 6H-SiC(0001)
Författare
Summary, in English
The influence of substrate orientation on the morphology of graphene growth on 6H-SiC(0 0 0 1) was investigated using low-energy electron and scanning tunneling microscopy (LEEM and STM). Large area monolayer graphene was successfully furnace-grown on these substrates. Larger terrace widths and smaller step heights were obtained on substrates with a smaller mis-orientation from on-axis (0.03°) than on those with a larger (0.25°). Two different types of a carbon atom networks, honeycomb and three-for-six arrangement, were atomically resolved in the graphene monolayer. These findings are of relevance for various potential applications based on graphene–SiC structures.
Avdelning/ar
Publiceringsår
2009
Språk
Engelska
Sidor
87-90
Publikation/Tidskrift/Serie
Surface Science
Volym
603
Issue
15
Dokumenttyp
Artikel i tidskrift
Förlag
Elsevier
Ämne
- Natural Sciences
- Physical Sciences
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 0039-6028