Anti-domain-free GaP, grown in atomically flat (001) Si sub-mu m-sized openings

Summary, in English

We demonstrate a method for growth of GaP nanocrystals on Si(001), developed to avoid defects related to antiphase domain boundaries in the proximity of the GaP/Si interface. The technique is based on sub-mum-sized selective-area epitaxy of GaP on atomically flat Si in masked openings. We have used field-emission scanning electron microscopy together with transmission electron microscopy to illustrate the method with examples of monocrystalline GaP nanocrystals. The optical properties of the nanocrystals were investigated by low-temperature cathodoluminescence.

• Författare: Jonas Ohlsson; Jan-Olle Malm; Anders Gustafsson; Lars Samuelson
• Avdelning/ar: Fasta tillståndets fysik; Centrum för analys och syntes
• Publiceringsår: 2002
• Språk: Engelska
• Sidor: 4546-4548
• Publikation/Tidskrift/Serie: Applied Physics Letters
• Volym: 80
• Issue: 24
• Länkar: http://dx.doi.org/10.1063/1.1485311
• Dokumenttyp: Artikel i tidskrift
• Förlag: American Institute of Physics (AIP)
• Ämne: Chemical Sciences; Condensed Matter Physics
• Status: Published
• ISBN/ISSN/Övrigt: ISSN: 0003-6951