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Ultrahigh vacuum scanning probe investigations of metal induced void formation in SiO2/Si(111))

In English

Författare

Summary, in English

Using scanning electron microscopy guidance, atomically resolved scanning tunneling microscopy investigations inside openings formed during the decomposition of a thick SiO2 film on a Si(111) surface have been performed. We report, for the first time, the presence of Ni atoms inside self-formed openings. The SiO2 decomposition as a function of annealing temperature and time was studied. By comparing self-formed and lithographically designed openings in the SiO2 layer we have shown that Ni contamination of the SiO2/Si(111) has a profound effect on the formation of self-induced lateral oxide openings. (C) 2002 American Vacuum Society.

Publiceringsår

2002

Språk

Engelska

Sidor

226-229

Publikation/Tidskrift/Serie

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Volym

20

Issue

1

Dokumenttyp

Konferensbidrag

Förlag

American Vacuum Society

Ämne

  • Condensed Matter Physics

Nyckelord

  • Ultrahigh vacuum scanning tunneling microscopy (UHVSTM)

Conference name

6th International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors

Conference date

2001-04-22 - 2001-04-26

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 1071-1023
  • ISSN: 1520-8567