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A novel frequency-multiplication device based on three-terminal ballistic junction

In English

Författare

Summary, in English

In this letter, a novel frequency-multiplication device based on a three-terminal ballistic junction is proposed and demonstrated. A 100 nm-size, three-terminal ballistic junction and a one-dimensional (1-D), lateral-field-effect transistor with trench gate-channel insulation are fabricated from high-electron-mobility GaInAs/InP quantum-well material as a single device. The devices show frequency doubling and gain at room temperature. The performance of these devices up to room temperature originates from the nature of the device functionality and the fact that the three-terminal device extensions are maintained below the carrier mean-free path. Furthermore, it is expected that the device performance can be extended up to THz-range.

Publiceringsår

2002

Språk

Engelska

Sidor

377-379

Publikation/Tidskrift/Serie

IEEE Electron Device Letters

Volym

23

Issue

7

Dokumenttyp

Artikel i tidskrift

Förlag

IEEE - Institute of Electrical and Electronics Engineers Inc.

Ämne

  • Condensed Matter Physics

Nyckelord

  • three-terminal ballistic
  • ballistic devices
  • frequency-multiplication
  • junctions

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 0741-3106