Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides

Summary, in English

Amorphous surface oxides of III-V semiconductors are harmful in many contexts of device development. Using low-energy electron diffraction and photoelectron spectroscopy, we demonstrate that surface oxides formed at Sn-capped GaAs(100) and InAs(100) surfaces in air are effectively removed by heating. This Sn-mediated oxide desorption procedure results in the initial well-defined Sn-stabilized (1x2) surface even for samples exposed to air for a prolonged time. Based on ab initio calculations we propose that the phenomenon is due to indirect and direct effects of Sn. The Sn-induced surface composition weakens oxygen adsorption. (C) 2011 American Institute of Physics. [doi:10.1063/1.3596702]

• Författare: P. Laukkanen; M. P. J. Punkkinen; J. Lang; M. Tuominen; M. Kuzmin; V. Tuominen; J. Dahl; Johan Adell; Janusz Sadowski; J. Kanski; V. Polojarvi; J. Pakarinen; K. Kokko; M. Guina; M. Pessa; I. J. Vayrynen
• Avdelning/ar: MAX IV-laboratoriet
• Publiceringsår: 2011
• Språk: Engelska
• Publikation/Tidskrift/Serie: Applied Physics Letters
• Volym: 98
• Issue: 23
• Länkar: http://dx.doi.org/10.1063/1.3596702
• Dokumenttyp: Artikel i tidskrift
• Förlag: American Institute of Physics (AIP)
• Ämne: Natural Sciences; Physical Sciences
• Status: Published
• ISBN/ISSN/Övrigt: ISSN: 0003-6951