Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon

Summary, in English

Growth of GaAs/GaAsSb heterostructure nanowires on silicon without the need for gold seed particles is presented. A high vertical yield of GaAs nanowires is first obtained, and then GaAsxSb1-x segments are successfully grown axially in these nanowires. GaAsSb can also be integrated as a shell around the GaAs core. Finally, two GaAsSb segments are grown inside a GaAs nanowire and passivated using an AlxGa1-xAs shell. It is found that no stacking faults or twin planes occur in the GaAsSb segments.

• Författare: S. Plissard; Kimberly Dick Thelander; X. Wallart; P. Caroff
• Avdelning/ar: Fasta tillståndets fysik; NanoLund: Centre for Nanoscience
• Publiceringsår: 2010
• Språk: Engelska
• Publikation/Tidskrift/Serie: Applied Physics Letters
• Volym: 96
• Issue: 12
• Länkar: http://dx.doi.org/10.1063/1.3367746
• Dokumenttyp: Artikel i tidskrift
• Förlag: American Institute of Physics (AIP)
• Ämne: Condensed Matter Physics
• Nyckelord: semiconductor quantum wires; semiconductor; semiconductor growth; nanowires; nanofabrication; growth; molecular beam epitaxial; gallium arsenide; III-V semiconductors; heterojunctions
• Status: Published
• ISBN/ISSN/Övrigt: ISSN: 0003-6951