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Ni 3d–BN "pi" hybridization at the h-BN/Ni(111) interface observed with core-level spectroscopies

Författare:
Publiceringsår: 2004
Språk: Engelska
Sidor: 165404-1-165404-8
Publikation/Tidskrift/Serie: Physical Review B
Volym: 70
Nummer: 16
Dokumenttyp: Artikel
Förlag: American Physical Society

Sammanfattning

The electronic structure of h-BN films grown on the Ni(111) surface has been studied as a function of film thickness using the synchrotron radiation based spectroscopic techniques: soft x-ray absorption, core-level photoemission and resonant Auger spectroscopy. A manifestation of the strong orbital hybridization between Ni 3d and h-BN pi states has been consistently observed in all spectra, implying a rather strong interfacial interaction between h-BN and the substrate. In the B 1s and N 1s near-edge x-ray absorption fine structure of both bulk h-BN and a single monolayer adsorbed on Ni(111) we observe spectral structures, which can be interpreted as a manifestation of the interlayer conduction-band states of h-BN.

Disputation

Nyckelord

  • Physics and Astronomy

Övriga

Published
Yes
  • ISSN: 1098-0121

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