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A 15 GHz and a 20 GHz low noise amplifier in 90 nm RF CMOS

Författare:
  • Lars Aspemyr
  • Harald Jacobsson
  • Mingquan Bao
  • Henrik Sjöland
  • Mattias Ferndal
  • G Carchon
Publiceringsår: 2006
Språk: Engelska
Sidor: 387-390
Publikation/Tidskrift/Serie: Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
Dokumenttyp: Konferensbidrag

Sammanfattning

The design and measured performance of two low-noise amplifiers at 15 GHz and 20 GHz realized in a 90 nm RF-CMOS process are presented in this work. The 15 GHz LNA achieves a power gain of 12.9 dB, a noise figure of 2.0 dB and an input referred third-order intercept point (IIP3) of -2.3 dBm. The 20 GHz LNA has a power gain of 8.6 dB, a noise figure of 3.0 dB and an IIP3 of 5.6 dBm. Compared to previously reported designs, these two LNAs show lower noise figure at lower power consumption.

Nyckelord

  • Electrical Engineering, Electronic Engineering, Information Engineering

Övriga

Published
  • Elektronikkonstruktion-lup-obsolete
  • ISBN: 0-7803-9472-0

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