Design of resonant tunneling permeable base transistors
Författare
Summary, in English
Publiceringsår
2004
Språk
Engelska
Sidor
158-163
Publikation/Tidskrift/Serie
2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767)
Länkar
Dokumenttyp
Konferensbidrag
Förlag
IEEE - Institute of Electrical and Electronics Engineers Inc.
Ämne
- Condensed Matter Physics
- Electrical Engineering, Electronic Engineering, Information Engineering
Nyckelord
- geometrical parameters
- transconductance
- gate wires
- doping level
- permeable base transistors
- resonant tunneling
- high frequency operation
- tunneling characteristics
Conference name
2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings
Conference date
2003-08-25 - 2003-08-27
Conference place
San Diego, CA, United States
Status
Published
ISBN/ISSN/Övrigt
- ISBN: 0-7803-8614-0