Meny

Javascript verkar inte påslaget? - Vissa delar av Lunds universitets webbplats fungerar inte optimalt utan javascript, kontrollera din webbläsares inställningar.
Du är här

Design of resonant tunneling permeable base transistors

Författare:
Publiceringsår: 2004
Språk: Engelska
Sidor: 158-163
Publikation/Tidskrift/Serie: 2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767)
Dokumenttyp: Konferensbidrag
Förlag: IEEE--Institute of Electrical and Electronics Engineers Inc.

Sammanfattning

We evaluate the performance of resonant tunneling permeable base transistors (RT-PBTs) by numerical simulations. Since the current is limited by the barriers, a design with a low doping level around the embedded gate wires is chosen to improve the transconductance. We evaluate the influence of the various geometrical parameters, to optimize the design for high frequency operation. We obtain a performance comparable to conventional PBTs, to which we have incorporated the tunneling characteristics

Nyckelord

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering
  • geometrical parameters
  • transconductance
  • gate wires
  • doping level
  • permeable base transistors
  • resonant tunneling
  • high frequency operation
  • tunneling characteristics

Övriga

2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings
Published
  • ISBN: 0-7803-8614-0

Box 117, 221 00 LUND
Telefon 046-222 00 00 (växel)
Telefax 046-222 47 20
lu [at] lu.se

Fakturaadress: Box 188, 221 00 LUND
Organisationsnummer: 202100-3211
Om webbplatsen